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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-6F11 DIMENSIONS The EL-6F11 is a high-power GaAs IRED mounted in a clear epoxy package. This IRED is both compact and easy to mount. (Unit : mm) FEATURES UPlastic mold package with a large caliber lens UHigh output power APPLICATIONS UOptical switches MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 4 50 80 1 5 85 2 0 85 4 260 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth *3 Radiant intensity Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 50mA VR=4V F= I 20mA F= I 20mA F= I 50mA F= I 20mA Min. Typ. 1.3 940 50 6.0 ae 5 2 Max. 1.65 10 Unit. V *I A nm nm V deg. 2.5 *3. Measured by tester of KODENSHI CORP. - 1- Infrared Emitting Diodes(GaAs) EL-6F11 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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